tsms3700 document number 81037 rev. 1.7, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8553 infrared emitting diode, 950 nm, gaas description tsms3700 is a standard gaas infrared emitting diode in a miniature plcc-2 package. its flat window provides a wide aperture, making it ideal for use with external optics. the diode is case compatible to the temt3700 pho- totransistor, allowing the user to assemble his own optical interrupters. features ? smt ired with high radiant power low forward voltage compatible with automatic placement equipment eia and ice standard package suitable for infrared, vapor phase and wavesolder process available in 8 mm tape suitable for dc and high pulse current operation wide angle of half intensity ? = 60 peak wavelength p = 950 nm high reliability matching to temt3700 phototransistor lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications infrared source in tactile keyboards ir diode in low space applications matching with phototransistor temt3700 in reflective sensors pcb mounted infrared sensors infrared emitter for miniature light barriers parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code remarks TSMS3700-GS08 TSMS3700-GS08 moq: 7500 pcs tsms3700-gs18 tsms3700-gs18 moq: 8000 pcs parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 si fm 200 ma surge forward current t p = 100 si fsm 1.5 a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 55 to + 100 c
www.vishay.com 2 document number 81037 rev. 1.7, 08-mar-05 tsms3700 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified storage temperature range t stg - 55 to + 100 c soldering temperature t 10 sec t sd 260 c thermal resistance junction/ ambient on pc board r thja 450 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v i f = 1 a, t p = 100 sv f 1.8 v temp. coefficient of v f i f = 100 ma tk vf - 1.3 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf parameter test condition symbol min ty p. max unit radiant intensity i f = 100 ma, t p = 20 ms i e 1.6 4.5 8 mw/sr i f = 1.5 a, t p = 100 si e 35 mw/sr radiant power i f = 100 ma, t p = 20 ms e 15 mw temp. coefficient of e i f = 100 ma tk e - 0.8 %/k angle of half intensity ? 60 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 20 ma t r 800 ns i f = 1 a t r 400 ns fall time i f = 20 ma t f 800 ns i f = 1 a t f 400 ns virtual source diameter ? 0.5 mm parameter test condition symbol value unit
tsms3700 document number 81037 rev. 1.7, 08-mar-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. pulse forward current vs. pulse duration 0 50 100 150 200 250 p - power dissipation ( mw ) v 94 8029 r thja t amb - ambient temperature ( c) 100 80 60 40 20 0 0 25 50 75 100 125 94 7916 r thja t amb - ambient temperature ( c) 100 80 60 40 20 0 f i - forward current ( ma ) 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 9985 i - forward current ( ma ) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb <60 c figure 4.forwardcurrents.forwardvoltage figure 5.relatieforwardvoltages.ambienttemperature figure 6.radiantintens its.forwardcurrent 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i - forward current ( ma ) f 4 3 2 1 0 v f - forward voltag e(v) 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 i f - forward current ( ma ) 94 7956 10 3 10 1 10 2 10 4 10 0 0.1 1 10 100 i - radiant intensity ( mw/sr ) e
www.vishay.com 4 document number 81037 rev. 1.7, 08-mar-05 tsms3700 vishay semiconductors figure 7. radiant power vs. forward current figure 8. rel. radiant intensity/power vs. ambient temperature figure 9. relative radiant power vs. wavelength - radiant power ( mw ) e i f - forward current ( ma ) 94 8012 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i; e rel e rel 140 94 7993 i f =20ma t amb - ambient temperature ( c) 900 950 0 0.25 0.5 0.75 1.0 1.25 - wavelength ( nm ) 1000 94 7994 - relative radiant power i f = 100 ma e rel 0.4 0.2 0 0.2 0.4 i - rel a tive r a di a nt intensity e rel 0.6 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
tsms3700 document number 81037 rev. 1.7, 08-mar-05 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
www.vishay.com 6 document number 81037 rev. 1.7, 08-mar-05 tsms3700 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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